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Investigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging

dc.contributor.authorThøgersen, Annett
dc.contributor.authorJensen, Ingvild Julie Thue
dc.contributor.authorGraff, Joachim Seland
dc.contributor.authorRingdalen, Inga Gudem
dc.contributor.authorAlmeida Carvalho, Patricia
dc.contributor.authorMehl, Torbjørn
dc.contributor.authorZhu, Junjie
dc.contributor.authorBurud, Ingunn
dc.contributor.authorOlsen, Espen
dc.contributor.authorSøndenå, Rune
dc.date.accessioned2022-06-17T09:42:57Z
dc.date.available2022-06-17T09:42:57Z
dc.date.created2022-04-27T19:16:42Z
dc.date.issued2022
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/11250/2999270
dc.language.isoengen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleInvestigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imagingen_US
dc.title.alternativeInvestigation of veryintenseD3-band emission in multi-crystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imagingen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holder© 2022 Author(s).en_US
dc.source.volume131en_US
dc.source.journalJournal of Applied Physicsen_US
dc.source.issue14en_US
dc.identifier.doihttps://doi.org/10.1063/5.0087119
dc.identifier.cristin2019649
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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