Browsing IFE BRAGE by Author "Nærland, Tine Uberg"
Now showing items 1-6 of 6
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Direct monitoring of minority carrier density during light induced degradation in Czochralski silicon by photoluminescence imaging
Nærland, Tine Uberg; Angelskår, Hallvard; Marstein, Erik Stensrud (Journal article; Peer reviewed, 2013) -
Hybrid PV-systems and co-localization of charging and filling stations for electrification of road transport sector
Fagerström, Jonathan; Kvalbein, Lisa; Danebergs, Janis; Nærland, Tine Uberg; Øgaard, Mari; Espegren, Kari Aamodt (Peer reviewed; Journal article, 2022) -
Is It Possible to Unambiguously Assess the Presence of Two Defects By Temperature- and Injection-Dependent Lifetime Spectroscopy?
Nærland, Tine Uberg; Bernardini, Simone; Wiig, Marie Syre; Bertoni, Mariana (Peer reviewed; Journal article, 2018) -
On the recombination centers of iron-gallium pairs in Ga-doped silicon
Nærland, Tine Uberg; Bernardini, Simone; Haug, Halvard; Grini, Sigbjørn; Vines, Lasse; Stoddard, Nathan; Bertoni, Mariana (Journal article; Peer reviewed, 2017) -
Recent insights into boron-oxygen related degradation: Evidence of a single defect
Hallam, Brett; Kim, Moonyong; Abbot, Malcolm; Nampalli, Nitin; Nærland, Tine Uberg; Stefani, Bruno; Wenham, Stuart (Journal article; Peer reviewed, 2017) -
Studying light-induced degradation by lifetime decay analysis: Excellent fit to solution of simple second-order rate equation
Nærland, Tine Uberg; Haug, Halvard; Angelskår, Hallvard; Søndenå, Rune; Marstein, Erik Stensrud; Arnberg, Lars (Journal article; Peer reviewed, 2013)Twenty different boron-doped Czochralski silicon materials have been analyzed for light-induced degradation. The carrier lifetime degradation was monitored by an automated quasi-steady-state photoconductance setup with an ...