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Investigation of the areas with high D07-band emission in multicrystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imaging

dc.contributor.authorThøgersen, Annett
dc.contributor.authorJensen, Ingvild Julie Thue
dc.contributor.authorMehl, Torbjørn
dc.contributor.authorBurud, Ingunn
dc.contributor.authorOlsen, Espen
dc.contributor.authorRingdalen, Inga Gudem
dc.contributor.authorZhu, Junjie
dc.contributor.authorSøndenå, Rune
dc.date.accessioned2024-05-28T10:45:25Z
dc.date.available2024-05-28T10:45:25Z
dc.date.created2024-04-25T13:34:22Z
dc.date.issued2024
dc.identifier.citationJournal of Applied Physics. 2024, 135 (13), .en_US
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/11250/3131688
dc.language.isoengen_US
dc.rightsNavngivelse 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/deed.no*
dc.titleInvestigation of the areas with high D07-band emission in multicrystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imagingen_US
dc.title.alternativeInvestigation of the areas with high D07-band emission in multicrystalline silicon wafers using electron microscopy and hyperspectral photoluminescence imagingen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holder© Author(s) 2024.en_US
dc.source.pagenumber7en_US
dc.source.volume135en_US
dc.source.journalJournal of Applied Physicsen_US
dc.source.issue13en_US
dc.identifier.doi10.1063/5.0196586
dc.identifier.cristin2264519
dc.relation.projectNorges forskningsråd: 280909en_US
dc.relation.projectNorges forskningsråd: 197405en_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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Except where otherwise noted, this item's license is described as Navngivelse 4.0 Internasjonal