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In-pile tensile creep of chemical vapor deposited silicon carbide at 300 °C

dc.contributor.authorKoyanagi, Takaaki
dc.contributor.authorTerrani, Kurt
dc.contributor.authorKarlsen, Torill Marie
dc.contributor.authorAndersson, Vendi
dc.contributor.authorSprouster, David
dc.contributor.authorEcker, Lynne
dc.contributor.authorKatoh, Yutai
dc.date.accessioned2019-08-16T11:03:45Z
dc.date.available2019-08-16T11:03:45Z
dc.date.created2019-06-20T08:47:17Z
dc.date.issued2019
dc.identifier.citationJournal of Nuclear Materials. 2019, 521 63-70.nb_NO
dc.identifier.issn0022-3115
dc.identifier.urihttp://hdl.handle.net/11250/2608739
dc.language.isoengnb_NO
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.titleIn-pile tensile creep of chemical vapor deposited silicon carbide at 300 °Cnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersion
dc.source.pagenumber63-70nb_NO
dc.source.volume521nb_NO
dc.source.journalJournal of Nuclear Materialsnb_NO
dc.identifier.doi10.1016/j.jnucmat.2019.04.048
dc.identifier.cristin1706295
cristin.unitcode7492,10,0,0
cristin.unitcode7492,10,3,0
cristin.unitnameNukleærteknologi Halden
cristin.unitnameNukleær materialteknologi, elektronstrålesveising og verksteder
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal