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The effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-silicon wafers

dc.contributor.authorWiig, Marie Syre
dc.contributor.authorAdamczyk, Krzysztof
dc.contributor.authorHaug, Halvard
dc.contributor.authorEkstrøm, Kai Erik
dc.contributor.authorSøndenå, Rune
dc.date.accessioned2018-11-26T11:40:42Z
dc.date.available2018-11-26T11:40:42Z
dc.date.created2016-10-26T12:14:40Z
dc.date.issued2016
dc.identifier.citationEnergy Procedia. 2016, 92 886-895.nb_NO
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/11250/2574841
dc.language.isoengnb_NO
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.titleThe effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-silicon wafersnb_NO
dc.title.alternativeThe effect of phosphorus diffusion gettering on recombination at grain boundaries in HPMC-silicon wafersnb_NO
dc.typeJournal articlenb_NO
dc.description.versionpublishedVersionnb_NO
dc.rights.holder© 2016 The Author(s). Published by Elsevier Ltd.nb_NO
dc.source.pagenumber886-895nb_NO
dc.source.volume92nb_NO
dc.source.journalEnergy Procedianb_NO
dc.identifier.doi10.1016/j.egypro.2016.07.098
dc.identifier.cristin1394650
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode0


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