Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound

Journal article, Peer reviewed

Accepted version

View/Open

Postprint (97.92Kb)

URI

http://hdl.handle.net/11250/2459391

Date

2009

Metadata

Show full item record

Collections

• Publikasjoner fra CRIStin [900]
• Vitenskapelige publikasjoner / Scientific publications [787]

Original version

Inorganic Materials (Neorganicheskie materialy). 2009, 45 (11), 1213-1216.   10.1134/S002016850911003X

Journal

Inorganic Materials (Neorganicheskie materialy)

Copyright

© Pleiades Publishing, Ltd., 2009. Original Russian Text © A.Sh. Davletova, S.Zh. Karazhanov, 2009,