dc.contributor.author | Davletova, A. Sh. | |
dc.contributor.author | Karazhanov, Smagul | |
dc.date.accessioned | 2017-10-10T10:22:19Z | |
dc.date.available | 2017-10-10T10:22:19Z | |
dc.date.created | 2012-07-17T11:28:32Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Inorganic Materials (Neorganicheskie materialy). 2009, 45 (11), 1213-1216. | nb_NO |
dc.identifier.issn | 0020-1685 | |
dc.identifier.uri | http://hdl.handle.net/11250/2459391 | |
dc.language.iso | eng | nb_NO |
dc.title | Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound | nb_NO |
dc.type | Journal article | nb_NO |
dc.type | Peer reviewed | nb_NO |
dc.description.version | acceptedVersion | nb_NO |
dc.rights.holder | © Pleiades Publishing, Ltd., 2009. Original Russian Text © A.Sh. Davletova, S.Zh. Karazhanov, 2009, | nb_NO |
dc.source.pagenumber | 1213-1216 | nb_NO |
dc.source.volume | 45 | nb_NO |
dc.source.journal | Inorganic Materials (Neorganicheskie materialy) | nb_NO |
dc.source.issue | 11 | nb_NO |
dc.identifier.doi | 10.1134/S002016850911003X | |
dc.identifier.cristin | 934990 | |
dc.relation.project | Norges forskningsråd: 181884 | nb_NO |
cristin.unitcode | 7492,1,3,0 | |
cristin.unitname | Solenergi | |
cristin.ispublished | true | |
cristin.fulltext | postprint | |
cristin.qualitycode | 1 | |