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dc.contributor.authorDavletova, A.
dc.contributor.authorKarazhanov, Smagul
dc.date.accessioned2017-09-28T12:00:19Z
dc.date.available2017-09-28T12:00:19Z
dc.date.created2011-12-12T11:22:01Z
dc.date.issued2009
dc.identifier.citationJournal of Physics and Chemistry of Solids. 2009, 70 (6), 989-992.nb_NO
dc.identifier.issn0022-3697
dc.identifier.urihttp://hdl.handle.net/11250/2457326
dc.language.isoengnb_NO
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internasjonal*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/deed.no*
dc.titleA study of electrical properties of dislocation engineered Si processed by ultrasoundnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionsubmittedVersionnb_NO
dc.rights.holderCopyright © 2009 Elsevier Ltd. All rights reserved.nb_NO
dc.source.pagenumber989-992nb_NO
dc.source.volume70nb_NO
dc.source.journalJournal of Physics and Chemistry of Solidsnb_NO
dc.source.issue6nb_NO
dc.identifier.doi10.1016/j.jpcs.2009.05.009
dc.identifier.cristin866415
dc.relation.projectNorges forskningsråd: 181884nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextpreprint
cristin.qualitycode1


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Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal
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