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Investigation of Carrier Recombination at the SiO2/c-Si Interface by Photoluminescence Imaging Under Applied Bias

dc.contributor.authorHaug, Halvard
dc.contributor.authorNordseth, Ørnulf
dc.contributor.authorMonakhov, Edouard
dc.contributor.authorMarstein, Erik Stensrud
dc.date.accessioned2015-06-16T12:49:15Z
dc.date.accessioned2015-06-17T08:32:06Z
dc.date.available2015-06-16T12:49:15Z
dc.date.available2015-06-17T08:32:06Z
dc.date.issued2014
dc.identifier.citationIEEE Journal of Photovoltaics 2014, 4(1):374-379nb_NO
dc.identifier.issn2156-3403
dc.identifier.urihttp://hdl.handle.net/11250/285085
dc.description-nb_NO
dc.language.isoengnb_NO
dc.titleInvestigation of Carrier Recombination at the SiO2/c-Si Interface by Photoluminescence Imaging Under Applied Biasnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.date.updated2015-06-16T12:49:15Z
dc.source.journalIEEE Journal of Photovoltaicsnb_NO
dc.identifier.doi10.1109/JPHOTOV.2013.2285833
dc.identifier.cristin1122252
dc.relation.projectNorges forskningsråd: 181884nb_NO


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