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Hydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing process

dc.contributor.authorWeiser, Philip Michael
dc.contributor.authorMonakhov, Eduard
dc.contributor.authorHaug, Halvard
dc.contributor.authorWiig, Marie Syre
dc.contributor.authorSøndenå, Rune
dc.date.accessioned2020-03-16T09:40:04Z
dc.date.available2020-03-16T09:40:04Z
dc.date.created2020-02-24T08:38:53Z
dc.date.issued2020
dc.identifier.citationJournal of Applied Physics. 2020, 127 (6), .en_US
dc.identifier.issn0021-8979
dc.identifier.urihttps://hdl.handle.net/11250/2646890
dc.language.isoengen_US
dc.titleHydrogen-related defects measured by infrared spectroscopy in multicrystalline silicon wafers throughout an illuminated annealing processen_US
dc.typePeer revieweden_US
dc.typeJournal articleen_US
dc.description.versionpublishedVersionen_US
dc.rights.holder© 2020 Author(s).en_US
dc.source.pagenumber7en_US
dc.source.volume127en_US
dc.source.journalJournal of Applied Physicsen_US
dc.source.issue6en_US
dc.identifier.doi10.1063/1.5142476
dc.identifier.cristin1796852
dc.relation.projectNorges forskningsråd: 280909en_US
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


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