Show simple item record

Passivation Characteristics of New Silicon Oxide

dc.contributor.authorGong, Lei
dc.contributor.authorZhou, Chunlan
dc.contributor.authorZhu, Junjie
dc.contributor.authorWang, Wenjing
dc.date.accessioned2020-01-16T07:59:18Z
dc.date.available2020-01-16T07:59:18Z
dc.date.created2019-12-13T12:41:35Z
dc.date.issued2019
dc.identifier.citationIEEE Journal of Photovoltaics. 2019, 9 (6), 1873-1879.nb_NO
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/11250/2636543
dc.language.isoengnb_NO
dc.titlePassivation Characteristics of New Silicon Oxidenb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.source.pagenumber1873-1879nb_NO
dc.source.volume9nb_NO
dc.source.journalIEEE Journal of Photovoltaicsnb_NO
dc.source.issue6nb_NO
dc.identifier.doi10.1109/JPHOTOV.2019.2929445
dc.identifier.cristin1760526
dc.relation.projectNorges forskningsråd: 261574nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


Files in this item

Thumbnail
Name:
IEEE+Journal+of+photovoltaics- ...
Size:
5.955Mb
Format:
PDF
View/Open

This item appears in the following Collection(s)

Show simple item record