Vis enkel innførsel

On the recombination centers of iron-gallium pairs in Ga-doped silicon

dc.contributor.authorNærland, Tine Uberg
dc.contributor.authorBernardini, Simone
dc.contributor.authorHaug, Halvard
dc.contributor.authorGrini, Sigbjørn
dc.contributor.authorVines, Lasse
dc.contributor.authorStoddard, Nathan
dc.contributor.authorBertoni, Mariana
dc.date.accessioned2018-03-26T08:26:20Z
dc.date.available2018-03-26T08:26:20Z
dc.date.created2017-11-14T12:51:44Z
dc.date.issued2017
dc.identifier.citationJournal of Applied Physics. 2017, 122 (8), 1-11.nb_NO
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11250/2492044
dc.language.isoengnb_NO
dc.titleOn the recombination centers of iron-gallium pairs in Ga-doped siliconnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionpublishedVersionnb_NO
dc.source.pagenumber1-11nb_NO
dc.source.volume122nb_NO
dc.source.journalJournal of Applied Physicsnb_NO
dc.source.issue8nb_NO
dc.identifier.doi10.1063/1.5000358
dc.identifier.cristin1513923
dc.relation.projectNorges forskningsråd: 243642nb_NO
dc.relation.projectNorges forskningsråd: 245963nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextoriginal
cristin.qualitycode1


Tilhørende fil(er)

Thumbnail
Filnavn:
Journal-of-Applied+Physics-201 ...
Størrelse:
1.638Mb
Format:
PDF
Åpne

Denne innførselen finnes i følgende samling(er)

Vis enkel innførsel