Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions

dc.contributor.author	Søndenå, Rune
dc.contributor.author	Ryningen, Birgit
dc.contributor.author	Juel, Mari
dc.date.accessioned	2018-01-08T12:02:10Z
dc.date.available	2018-01-08T12:02:10Z
dc.date.created	2017-12-08T10:29:24Z
dc.date.issued	2017
dc.identifier.citation	Energy Procedia. 2017, 124 ?-786.	nb_NO
dc.identifier.issn	1876-6102
dc.identifier.uri	http://hdl.handle.net/11250/2476197
dc.language.iso	eng	nb_NO
dc.rights	Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/4.0/deed.no	*
dc.title	Minority carrier lifetimes in Cz-Si wafers with intentional V-I transitions	nb_NO
dc.type	Journal article	nb_NO
dc.type	Peer reviewed	nb_NO
dc.description.version	publishedVersion	nb_NO
dc.rights.holder	© 2017 The Author(s). Published by Elsevier Ltd.	nb_NO
dc.source.volume	124	nb_NO
dc.source.journal	Energy Procedia	nb_NO
dc.identifier.doi	10.1016/j.egypro.2017.09.348
dc.identifier.cristin	1524559
cristin.unitcode	7492,1,3,0
cristin.unitname	Solenergi
cristin.ispublished	true
cristin.fulltext	original
cristin.qualitycode	1

Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internasjonal