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dc.contributor.authorDavletova, A. Sh.
dc.contributor.authorKarazhanov, Smagul
dc.date.accessioned2017-10-10T10:22:19Z
dc.date.available2017-10-10T10:22:19Z
dc.date.created2012-07-17T11:28:32Z
dc.date.issued2009
dc.identifier.citationInorganic Materials (Neorganicheskie materialy). 2009, 45 (11), 1213-1216.nb_NO
dc.identifier.issn0020-1685
dc.identifier.urihttp://hdl.handle.net/11250/2459391
dc.language.isoengnb_NO
dc.titleSensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasoundnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.rights.holder© Pleiades Publishing, Ltd., 2009. Original Russian Text © A.Sh. Davletova, S.Zh. Karazhanov, 2009,nb_NO
dc.source.pagenumber1213-1216nb_NO
dc.source.volume45nb_NO
dc.source.journalInorganic Materials (Neorganicheskie materialy)nb_NO
dc.source.issue11nb_NO
dc.identifier.doi10.1134/S002016850911003X
dc.identifier.cristin934990
dc.relation.projectNorges forskningsråd: 181884nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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