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dc.contributor.authorAdamczyk, Krzysztof
dc.contributor.authorSøndenå, Rune
dc.contributor.authorM'hamdi, Mohammed
dc.contributor.authorAutruffe, Antoine
dc.contributor.authorStokkan, Gaute
dc.contributor.authorDi Sabatino, Marisa
dc.date.accessioned2017-09-15T10:44:59Z
dc.date.available2017-09-15T10:44:59Z
dc.date.created2016-08-22T12:51:09Z
dc.date.issued2016
dc.identifier.citationPhysica Status Solidi. C, Current topics in solid state physics. 2016, 13 (10-12), 812-815.nb_NO
dc.identifier.issn1610-1634
dc.identifier.urihttp://hdl.handle.net/11250/2454844
dc.description.abstractHigh performance multicrystalline silicon wafers used in solar cell processing have been investigated with focus on quantification of the grain boundary effect on lifetime. The lifetime of a set of 16 wafers from different positions along the ingot and after different process steps – phosphorus gettering, SiNx:H layer deposition and firing – is measured by µPCD and compared with microstructural information from EBSD. This allows for analysis of the behaviour of grain boundaries and their influence on lifetime during solar cell processing. The minority carrier lifetime of HPMC-Si wafers is not increased after the gettering step, but even reduced for some samples. It is shown that the lifetime in areas close to grain boundaries is reduced during the gettering step and this has a stronger effect on the average value than the improvement within the grains. Only wafers after both gettering and hydrogenation show an overall improvement in carrier lifetimes. However, in the regions close to the bottom of the ingot, wafers show lifetime degradation after the hydrogenation process. The results are used to obtain quantitative information on recombination velocity of grain boundaries.nb_NO
dc.language.isoengnb_NO
dc.titleGrain boundary effect on lifetime in high performance multicrystalline silicon during solar cell processingnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.rights.holderCopyright © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimnb_NO
dc.source.pagenumber812-815nb_NO
dc.source.volume13nb_NO
dc.source.journalPhysica Status Solidi. C, Current topics in solid state physicsnb_NO
dc.source.issue10-12nb_NO
dc.identifier.doi10.1002/pssc.201600059
dc.identifier.cristin1374593
dc.relation.projectNorges forskningsråd: 228930nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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