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SiOyNx/SiNx stack: a promising surface passivation layer for high-efficiency and potential-induced degradation resistant mc-silicon solar cells

dc.contributor.authorZhou, Chunlan
dc.contributor.authorZhu, Junjie
dc.contributor.authorZhou, Su
dc.contributor.authorTang, Yehua
dc.contributor.authorFoss, Sean Erik
dc.contributor.authorHaug, Halvard
dc.contributor.authorNordseth, Ørnulf
dc.contributor.authorMarstein, Erik Stensrud
dc.contributor.authorWang, Wenjing
dc.date.accessioned2017-09-12T07:26:43Z
dc.date.available2017-09-12T07:26:43Z
dc.date.created2016-10-25T10:41:34Z
dc.date.issued2017
dc.identifier.citationProgress in Photovoltaics. 2017, 25 (1), 23-32.nb_NO
dc.identifier.issn1062-7995
dc.identifier.urihttp://hdl.handle.net/11250/2454153
dc.language.isoengnb_NO
dc.titleSiOyNx/SiNx stack: a promising surface passivation layer for high-efficiency and potential-induced degradation resistant mc-silicon solar cellsnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.rights.holderCopyright © 2016 John Wiley & Sons, Ltd.nb_NO
dc.source.pagenumber23-32nb_NO
dc.source.volume25nb_NO
dc.source.journalProgress in Photovoltaicsnb_NO
dc.source.issue1nb_NO
dc.identifier.doi10.1002/pip.2803
dc.identifier.cristin1394303
dc.relation.projectNorges forskningsråd: 221668nb_NO
dc.relation.projectNorges forskningsråd: 193829nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode1


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