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Direct monitoring of minority carrier density during light induced degradation in Czochralski silicon by photoluminescence imaging

dc.contributor.authorNærland, Tine Uberg
dc.contributor.authorAngelskår, Hallvard
dc.contributor.authorMarstein, Erik Stensrud
dc.date.accessioned2017-08-28T10:29:14Z
dc.date.available2017-08-28T10:29:14Z
dc.date.created2013-07-24T09:33:06Z
dc.date.issued2013
dc.identifier.citationJournal of Applied Physics. 2013, 113 (19), .nb_NO
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11250/2452033
dc.language.isoengnb_NO
dc.titleDirect monitoring of minority carrier density during light induced degradation in Czochralski silicon by photoluminescence imagingnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.rights.holder© 2013 AIP Publishing LLC.nb_NO
dc.source.pagenumber7nb_NO
dc.source.volume113nb_NO
dc.source.journalJournal of Applied Physicsnb_NO
dc.source.issue19nb_NO
dc.identifier.doi10.1063/1.4806999
dc.identifier.cristin1040094
dc.relation.projectNorges forskningsråd: 181884nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2


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