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Modulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias method

dc.contributor.authorHaug, Halvard
dc.contributor.authorOlibet, Sara
dc.contributor.authorNordseth, Ørnulf
dc.contributor.authorMarstein, Erik Stensrud
dc.date.accessioned2017-08-25T08:51:21Z
dc.date.available2017-08-25T08:51:21Z
dc.date.created2013-11-28T13:15:48Z
dc.date.issued2013
dc.identifier.citationJournal of Applied Physics. 2013, 114 (17), .nb_NO
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/11250/2451841
dc.language.isoengnb_NO
dc.titleModulating the field-effect passivation at the SiO2/c-Si interface: Analysis and verification of the photoluminescence imaging under applied bias methodnb_NO
dc.typeJournal articlenb_NO
dc.typePeer reviewednb_NO
dc.description.versionacceptedVersionnb_NO
dc.rights.holder© 2013 AIP Publishing LLC.nb_NO
dc.source.pagenumber10nb_NO
dc.source.volume114nb_NO
dc.source.journalJournal of Applied Physicsnb_NO
dc.source.issue17nb_NO
dc.identifier.doi10.1063/1.4827417
dc.identifier.cristin1070474
dc.relation.projectNorges forskningsråd: 181884nb_NO
cristin.unitcode7492,1,3,0
cristin.unitnameSolenergi
cristin.ispublishedtrue
cristin.fulltextpostprint
cristin.qualitycode2


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